PRESENTATION

Direct Atomic Layer Processing (DALP®): Spatially Localized, Multi-Material Fabrication for Next-Generation Devices from Discovery to Manufacturing

Progress in advanced electronic and functional devices is limited by rigid conventional thin-film processes, which restrict flexibility for spatially localized, multi-material fabrication. ATLANT 3D’s Direct Atomic Layer Processing (DALP®) enables digitally controlled, atomic-scale deposition of multiple materials in a single workflow, eliminating the need for intermediate lithography. DALP’s programmable architecture supports rapid materials discovery and direct device manufacturing, allowing precise control over material placement, thickness, and interfaces. This technology expands nanoscale fabrication capabilities, providing a streamlined path from materials exploration to manufacturable, device-ready structures for advanced semiconductor and functional applications.

Mira Baraket

ATLANT 3D

Mira Baraket, Ph.D., Chief Technology Officer at ATLANT 3D, has over 20 years of expertise in advanced materials, nanotechnology, and atomic-scale manufacturing. She has worked with ALD, PVD, CVD, plasma-based, and graphene technologies at premier institutions like the U.S. Naval Research Laboratory and the French Atomic Energy Commission. Mira bridges materials development with industrial production, leading ATLANT 3D’s technology strategy and advancing Direct Atomic Layer Processing (DALP®), which enables digitally controlled, atomic-precision fabrication of multi-material structures for next-generation device applications.